发明名称 Field emitter cell and array with vertical thin-film-edge emitter
摘要 A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.
申请公布号 US2002190622(A1) 申请公布日期 2002.12.19
申请号 US20010883458 申请日期 2001.06.13
申请人 HSU DAVID S.Y.;GRAY HENRY F.;GRAY JOAN G.;GRAY JAMES R. 发明人 HSU DAVID S.Y.;GRAY HENRY F.;GRAY JOAN G.;GRAY JAMES R.
分类号 H01J1/304;H01J1/62;H01J3/02;H01J9/00;H01J9/02;H01J63/04;(IPC1-7):H01J1/304;H01J19/24 主分类号 H01J1/304
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