| 摘要 |
<p>A method of manufacturing the bulk single crystal of gallium nitride for providing the bulk single crystal of gallium nitride by using supercritical ammonia by an autoclave (1) for producing supercritical solvent having a convection controller (2) installed therein, comprising the steps of forming the supercritical solvent containing alkali metal ion in the autoclave, dissolving feed stock in the solvent to produce supercritical solution, and crystallizing gallium nitride on a seed surface simultaneously or individually, wherein the autoclave is loaded in a furnace unit (4) having a heating device (5) or a cooling device (6), whereby, since the crystallization of the bulk single crystal of the gallium nitride thus obtained is excellent, the bulk single crystal can be applied as an optical element substrate such as a laser diode utilizing a nitride semiconductor.</p> |
