发明名称 |
Method for depositing thin film for element, and organic electroluminescence element |
摘要 |
The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k±0.5 wherein k is a constant from 2 to 5, when relationship between a deposition position and a film thickness of a material i on the substrate is approximated by the following equation (1): <paragraph lvl="0"><in-line-formula>Di/D0iOC(L0/Li)3cosnithetai (1) </in-line-formula>wherein L0 is a distance from an evaporation source to a plane of the substrate in a perpendicular direction, D0i is a film thickness of the material i at an intersection point of a perpendicular line from the evaporation source to the plane of the substrate, and Di is a film thickness of the material i at a position on the substrate which is apart from the evaporation source by a distance Li in a direction of an angle thetai against the perpendicular line. By the method, a homogenous thin film layer for an element can be formed even on a substrate having large screen.
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申请公布号 |
US2002192499(A1) |
申请公布日期 |
2002.12.19 |
申请号 |
US20010959655 |
申请日期 |
2001.11.02 |
申请人 |
TOKAILIN HIROSHI;NAGASAKI YOSHIKAZU |
发明人 |
TOKAILIN HIROSHI;NAGASAKI YOSHIKAZU |
分类号 |
H05B33/10;C09K11/06;C23C14/12;C23C14/24;H01L33/26;H01L51/00;H01L51/30;H01L51/40;H01L51/50;H05B33/12;H05B33/14;(IPC1-7):H05B33/12 |
主分类号 |
H05B33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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