| 摘要 |
A MOSFET device includes a gate formed on a multi-surface area of a semiconductor substrate formed of a first surface which is not etched, a second surface etched in parallel with the first surface, and a surface connecting the first and second surfaces. A source/drain region is formed below each of the first and second surfaces laterally adjacent to a gate prevailed on the matter surface. A first contact is formed of a conductive material formed on an upper surface of the source/drain region, and a second contact is formed of a conductive material formed on the gate, so that it is possible to prevent a punch through phenomenon, increase the integrity of the device, and decrease the contact resistance of a contact formed on the gate.
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