| 摘要 |
<p>A semiconductor manufacturing method and apparatus for controlling the oxidation of a wafer surface with a simple means and for integrally controlling a contaminant which promotes oxidation and a contaminant which causes a decrease in wafer yield. This semiconductor manufacturing method is characterized by treating while exposing a substrate surface to an active ion enriched gas. This semiconductor manufacturing apparatus is characterized by comprising a gas channel to pass a gas to be treated; a regulator of a negative ion enriched gas constituted of a gas cleaner arranged in the upstream section of the gas channel and a negative ion generator arranged in the downstream section; and a supply means which supplies a negative ion enriched gas to the substrate surface.</p> |
