发明名称 |
Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier |
摘要 |
A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.
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申请公布号 |
US2002190302(A1) |
申请公布日期 |
2002.12.19 |
申请号 |
US20010879105 |
申请日期 |
2001.06.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOJARCZUK ALEXANDER;CHAN KEVIN KOK;D'EMIC CHRISTOPHER PETER;GOUSEV EVGENI;GUHA SUPRATIK;JAMISON PAUL C.;RAGNARSSON LARS-AKE |
分类号 |
H01L21/8238;H01L27/108;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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