发明名称 |
SC-2 BASED PRE-THERMAL TREATMENT WAFER CLEANING PROCESS |
摘要 |
Pre heat-treatment processing of a silicon wafer to grow a hydrophilic oxide layer includes an initial step of contacting the wafer with a pre-clean SC-1 bath, thereby producing a silicon wafer surface that is highly particle free. After a deionized water rinse, the wafer is scoured with an aqueous solution containing hydrofluoric acid and hydrochloric acid to remove metallic-containing oxide from the wafer surface. In order to grow a hydrophilic oxide layer, an SC-2 bath (containing hydrogen peroxide and a dilute concentration of metal-scouring HCl) is used. The resulting hydrophilic silicon oxide layer grown on the surface of the silicon wafer using the combined SC-1->AF/HCL->SC-2 wafer cleaning process has a metal concentration no greater than 1x109. The diffusion length of minority carriers is increased from a range on the order of 500-600 microns to a range on the order of 800-900 microns.
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申请公布号 |
US2002189640(A1) |
申请公布日期 |
2002.12.19 |
申请号 |
US19990335113 |
申请日期 |
1999.06.17 |
申请人 |
LINN JACK H.;ROUSE GEORGE V.;RAFIE SANA;NOLAN-LOBMEYER ROBERTA R.;HACKENBERG DIANA LYNN;SLASOR STEVEN T.;VALADE TIMOTHY A. |
发明人 |
LINN JACK H.;ROUSE GEORGE V.;RAFIE SANA;NOLAN-LOBMEYER ROBERTA R.;HACKENBERG DIANA LYNN;SLASOR STEVEN T.;VALADE TIMOTHY A. |
分类号 |
H01L21/304;H01L21/306;H01L21/316;(IPC1-7):C23G1/02 |
主分类号 |
H01L21/304 |
代理机构 |
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地址 |
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