发明名称 Bulk monocrystalline gallium nitride
摘要 The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
申请公布号 US2002192507(A1) 申请公布日期 2002.12.19
申请号 US20020147318 申请日期 2002.05.17
申请人 DWILINSKI ROBERT TOMASZ;DORADZINSKI ROMAN MAREK;GARCZYNSKI JERZY;SIERZPUTOWSKI LESZEK PIOTR;KANBARA YASUO 发明人 DWILINSKI ROBERT TOMASZ;DORADZINSKI ROMAN MAREK;GARCZYNSKI JERZY;SIERZPUTOWSKI LESZEK PIOTR;KANBARA YASUO
分类号 C01G15/00;C30B7/00;C30B7/10;C30B9/00;C30B9/10;C30B29/38;H01L33/00;H01S5/028;H01S5/323;(IPC1-7):B32B9/00 主分类号 C01G15/00
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