发明名称 |
Bulk monocrystalline gallium nitride |
摘要 |
The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
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申请公布号 |
US2002192507(A1) |
申请公布日期 |
2002.12.19 |
申请号 |
US20020147318 |
申请日期 |
2002.05.17 |
申请人 |
DWILINSKI ROBERT TOMASZ;DORADZINSKI ROMAN MAREK;GARCZYNSKI JERZY;SIERZPUTOWSKI LESZEK PIOTR;KANBARA YASUO |
发明人 |
DWILINSKI ROBERT TOMASZ;DORADZINSKI ROMAN MAREK;GARCZYNSKI JERZY;SIERZPUTOWSKI LESZEK PIOTR;KANBARA YASUO |
分类号 |
C01G15/00;C30B7/00;C30B7/10;C30B9/00;C30B9/10;C30B29/38;H01L33/00;H01S5/028;H01S5/323;(IPC1-7):B32B9/00 |
主分类号 |
C01G15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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