| 摘要 |
<p>A semiconductor laser element which can provide a good FFP free from ripple and close to a Gaussian distribution, and which is provided with a laminate structure that is formed by sequentially laminating a first conductive type semiconductor layer, an active layer, and a second conductive type (different from the first conductive type) semiconductor layer and that has a waveguide area for guiding light in one direction and a laser-resonating resonator surfaces at the opposite ends thereof, wherein the laminate structure has at one end thereof a non-resonator surface separate from the resonator surfaces and formed so as to include an active layer sectional surface, and the active layer sectional surface of the non-resonator surface is covered with a light shielding layer.</p> |
