| 摘要 |
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. The compliant substrate includes an accommodating buffer layer (304, 404) that comprises a layer of monocrystalline oxide spaced apart from at least a portion of a silicon wafer (302, 402) by an amorphous interface layer (306, 406) of silicon oxide. A resistive path (310, 422) for a circuit component on a monocrystalline compound semiconductor layer (308, 408) overlying the layer of monocrystalline oxide (304, 404) includes portions of the monocrystalline substrate (302). A portion of a waveguide (410) may be coupled to the resistive path (422).
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