发明名称 Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
摘要 In accordance with embodiments of the invention, a light emitting device includes a light emitting region and a reflective contact separated from the light emitting region by one or more layers. In a first embodiment, the separation between the light emitting region and the reflective contact is between about 0.5lambdn and about 0.9lambdn, where lambdn is the wavelength of radiation emitted from the light emitting region in an area of the device separating the light emitting region and the reflective contact. In a second embodiment, the separation between the light emitting region and the reflective contact is between about lambdn and about 1.4lambdn. The light emitting region may be, for example, III-nitride, III-phosphide, or any other suitable material.
申请公布号 US2002190260(A1) 申请公布日期 2002.12.19
申请号 US20020158360 申请日期 2002.05.29
申请人 SHEN YU-CHEN;KRAMES MICHAEL R.;LUDOWISE MICHAEL J. 发明人 SHEN YU-CHEN;KRAMES MICHAEL R.;LUDOWISE MICHAEL J.
分类号 H01L27/15;H01L33/02;H01L33/08;H01L33/38;H01L33/40;H01L33/52;H01L33/56;H01L33/62;H01L33/64;(IPC1-7):H01L31/12 主分类号 H01L27/15
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