| 摘要 |
1,071,383. Semi-conductor devices. HITACHI SEISAKUSHO KABUSHIKI KAISHA. June 23, 1964 [June 24, 1963], No. 25926/64. Heading H1K. A field effect transistor is formed in a body 1 of one conductivity type by providing regions 2, 2a connected by a surface channel layer 3a, these regions all being of the opposite conductivity type. The invention is characterized by the channel layer having a conductance (conductivity and/or thickness) which is non- uniform in the direction of the current flow. between source and drain electrodes 3, 4, 5 connected respectively to regions 2, 2a. The regions 2, 2a, 3a are formed by diffusion, and the non-uniform conductance in layer 3a is obtained by a post-diffusion treatment involving heating in an electric field as described in Specification 1,071,384. A surface oxide layer 6 has an area contact gate electrode 7 attached to it adjacent the channel layer 3a.
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