| 摘要 |
<p>A method of growing a gallium-containing nitride bulk single crystal such as GaN on a heterogeneous substrate such as SiC, comprising the steps of forming in an autoclave a supercritical ammonia solvent containing alkali metal ions, dissolving a gallium-containing feed stock in the supercritical ammonia, and crystallizing, by using the heterogeneous substrate as a seed, a gallium-containing nitride from the feed stock-dissolved supercritical solution under conditions of temperature higher and/or pressure lower than when the gallium-containing feed stock is dissolved into the supercritical solvent, wherein the seed does not contain oxygen among constituent elements, and lattice constant on an a0-axis is 2.8-3.6, whereby it is possible to form a gallium nitride compound semiconductor element on a conductive substrate.</p> |
