发明名称 Semiconductor devices, memory systems and electronic apparatuses
摘要 Semiconductor devices are provided that include a memory cell having load transistors, driver transistors, and transfer transistors. The semiconductor device has a first element-forming region that can be provided in, for example, a p-well region. The first element-forming region can include includes a first active region, a second active region, a third active region, a fourth active region and a fifth active region. The third active region, the fourth active region and the fifth active region can be provided between the first active region and the second active region. The first active region and the second active region can be continuous with the third active region, the fourth active region and the fifth active region, respectively. Thus, semiconductor devices can be provided having element-forming regions that can be readily formed. Memory systems and electronic equipment that include such semiconductor devices can also be provided.
申请公布号 US2002190292(A1) 申请公布日期 2002.12.19
申请号 US20020150498 申请日期 2002.05.16
申请人 KARASAWA JUNICHI;WATANABE KUNIO 发明人 KARASAWA JUNICHI;WATANABE KUNIO
分类号 H01L21/8244;H01L27/11;(IPC1-7):H01L27/108;H01L29/76 主分类号 H01L21/8244
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