| 摘要 |
In order to have a thin type semiconductor chips featuring a high yield and a low cost in production, an excellent packaging reliability, and a robust structure against damages, there is provided a method of manufacturing LSI chips, comprising the steps of: pasting on a substrate an adhesive sheet which retains its adhesive strength prior to a processing, then loses it after the processing; bonding non-defective LSI chips on the adhesive sheet, with their device surfaces facing downward; uniformly coating an insulating film on the non-defective LSI chips; uniformly grinding the insulating film to a level of the bottom surfaces of these LSI chips; applying a predetermined process to the adhesive sheet to weaken its adhesive strength thereof so as to peel off a pseudo wafer on which the non-defective LSI chips are bonded; and dicing the LSI chips into a discrete non-defective electronic component by cutting the pseudo wafer.
|
