发明名称 METHOD OF FORMING THICK RESIST PATTERN
摘要 <p>A photosensitive resin composition is used which comprises an alkali-soluble resin and a photosensitizer containing a quinonediazide group, the alkali-soluble resin being a mixture of a novolac resin and at least one resin selected among (i) a polyacrylic ester, (ii) a polymethacrylic ester, (iii) a polystyrene derivative, and (iv) a copolymer composed of units of two or more monomers selected among acrylic esters, methacrylic esters, and styrene derivatives. This composition is applied to a substrate to form a thick photoresist film having a thickness of 2.0 μm or larger. The film is exposed to light and then developed to form a thick resist pattern. The photosensitive resin composition may contain a low- or high-molecular compound having one or more phenolic hydroxy groups which serves as a dissolution accelerator or sensitivity improver for the resist film, a fluorescent agent serving as a sensitizer, etc.</p>
申请公布号 WO2002101467(P1) 申请公布日期 2002.12.19
申请号 JP2002005523 申请日期 2002.06.05
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