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发明名称
Verfahren zur chemischen Aufdampfung zur Bildung einer dielektrischen Schicht mit hohem K-Wert und Verfahren zur Bildung eines Kondensators
摘要
申请公布号
DE10194692(T1)
申请公布日期
2002.12.19
申请号
DE20011094692T
申请日期
2001.01.03
申请人
MICRON TECHNOLOGY, INC.
发明人
BASCERI, CEM
分类号
C23C16/40;H01L21/02;H01L21/314;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):C23C16/40
主分类号
C23C16/40
代理机构
代理人
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