| 摘要 |
A silicon carbide single crystal which can be suitably used as a semi-insulating or insulating single crystal substrate and the like, and a method of efficiently producing the same, are provided. A method of producing a silicon carbide single crystal wherein a silicon carbide powder having a nitrogen content of 100 mass ppm or less is sublimated and then re-crystallized to grow a silicon carbide single crystal. An aspect in which the above-mentioned silicon carbide powder is obtained by calcinating a mixture containing at least a silicon source and a xylene-based resin, and an aspect in which the above-mentioned mixture is obtained by adding an acid to the silicon source then adding the xylene-based resin, and the like are preferable. The silicon carbide single crystal is produced by the above-mentioned method of producing a silicon carbide single crystal. An aspect in which the proportion of the crystal defects in the form of hollow pipe optically image-detected without break is 100/cm2 or less, an aspect in which the volume resistivity is 1x100 OMEGA cm or more, an aspect in which the nitrogen content is 0.01 mass ppm or less, and the like are preferable.
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