Formation of silicon on insulator (SOI) devices as add-on modules for system on a chip processing

摘要

A method for forming single crystalline silicon-on-insulator (SOI) structures over a silicon substrate includes forming an amorphous silicon layer over an insulating layer and contacting the substrate through the insulating layer. An excimer laser having operating conditions and a wavelength chosen to selectively melt amorphous silicon irradiates the entire substrate surface and is largely non-absorbed by materials other than silicon when incident upon them. Heating of the substrate and other materials is therefore minimal. After a blanket radiation process selectively melts the amorphous silicon layer, cooling conditions are chosen such that a single crystal silicon film is formed during the solidification process due to contact to the single crystal silicon substrate which acts as a seed layer. Various devices may be formed on the SOI islands as well as on exposed portions of the substrate not covered by the SOI islands.