MULTIPLE GATE INSULATORS WITH STRAINED SEMICONDUCTOR HETEROSTRUCTURES

摘要

A method is disclosed for forming multiple gate insulators on a strained semiconductor heterostructure as well as the devices and circuits formed therefrom. In an embodiment, the method includes the steps of depositing a first insulators on the strained semiconductor heterostructures, removing at least a portion of the first insulators from the strained semiconductor heterostructure, and depositing a second insulators on the strained semiconductor heterostructure.