| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric thin film capable of being used for ferroelectric memory by a sputtering method. SOLUTION: A ceramics target which is a compound expressed by Srx Biy Qz O9 , where Q is constituted of Ta and/or Nb and (x), (y) and (z) are respectively 0.50<=x<=0.75, 2.2<=y<=2.6 and 1.9<=z<=2.1 is used. The ferroelectric thin film is expressed by Srx Biy Qz O9 , where Q is constituted of Ta and/or Nb and (x), (y) and (z) are respectively 0.60<=x<=0.80, 2.1<=y<=2.5 and 1.9<=z<=2.1 and desirably formed by film depositing using the ceramic target by a RF magnetron sputtering method and crystallizing by annealing. The annealing is desirably performed at a temperature ranging from 600 deg.C to 850 deg.C in an oxygen atmosphere or in the air. |
