| 摘要 |
PROBLEM TO BE SOLVED: To provide a liquid phase epitaxial growth device, with which a crystalline substrate can be epitaxially grown without being damaged and the surface of the substrate can be simply cleaned by melt back. SOLUTION: The liquid phase epitaxial growth device has a wafer box 23 for horizontally moving a wafer in a temperature gradient changing depending on the horizontal distance of a tube heater 21 and for rotating the wafer in the direction orthogonal to the horizontal direction, and a melt tank body 24 rotatable around the outer periphery of the wafer box 23, and in the epitaxial growth device mentioned above, the feeding of the melt, melt back of the wafer 27, the epitaxial growth of the wafer 27, and the discharge of the melt are carried out by the rotation of the melt tank body 24, and the movement and the rotation of the wafer box 23.
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