| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacity-coupling type plasma treatment device for sputtering film deposition in which ion flux is uniformly deposited on a surface of a substrate at high concentration, but not re-deposited on a target. SOLUTION: The plasma treatment device comprises an upper electrode 1 having a capacity-coupling type mechanism, a target member 2 fitted to the upper electrode and formed of a non-magnetic substance, a plurality of magnets 6 which are disposed on an upper surface of the target member having alternately changing polarity at equal intervals between the two magnets, a lower electrode 3 disposed parallel to the upper electrode, a wafer 17 mounted on the lower electrode, and a high frequency power source 16 which is operated at the frequency in a range of 10-300 MHz, and connected to the upper electrode via a matching circuit 15.
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