发明名称 HEATING PART OF CHEMICAL VAPOR DEPOSITION APPARATUS
摘要 PURPOSE: A heating part of chemical vapor deposition apparatus is provided which increases connection area between connection terminal of a ground line and connection part of a heater so that residual current is smoothly discharged. CONSTITUTION: In a heating part(200) of chemical vapor deposition apparatus comprising a heater(210) having first, second and third connection parts(211,212,213) and supplying heat to a wafer holder(10); a power supply part(220) that is electrically connected to the heater(210); a loaded line(240) and a neutral line(250) for electrically connecting the first and second connection parts(211,212) to the power supply part(220); a ground line(260) having first and second connection terminals(261,262) that are inserted into a ground part(270) formed on the body of a chamber and the third connection part(213); and a protection part(230) for sealing the first, second and third connection parts(211,212,213), the heating part(200) of the chemical vapor deposition apparatus is characterized in that the third connection part(213) is a female type socket on which screw thread is formed, and the first connection terminal(261) is a male type screw on which screw thread corresponding to the third connection part is formed, and wherein the ground part(270) is a female type socket on which screw thread is formed, and the second connection terminal(262) is a male type screw on which screw thread is formed so that the second connection terminal(262) corresponds to the ground part(270).
申请公布号 KR20020094741(A) 申请公布日期 2002.12.18
申请号 KR20010033156 申请日期 2001.06.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, CHEOL JAE
分类号 C23C16/46;(IPC1-7):C23C16/46 主分类号 C23C16/46
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