| 摘要 |
<p>In an electron beam lithography apparatus, when a plotting pattern to be plotted is an isolated fine pattern, an exposure energy upon plotting lacks. In the prior art set forth above, dimension dependent exposure energy correction is performed as a measure. However, a problem is encountered in that excessive exposure is caused in a region where an exposure area ratio is high. The present invention solves the problem in the foregoing prior art and provides an electron beam lithography apparatus and a lithography method using an electron beam achieves good plotting dimension accuracy even for a fine pattern plotting where regions having different exposure area ratios are present in admixing manner. For solving this problem, the present invention provides the electron beam lithography apparatus which takes matching of line width dependent correction as correction corresponding to a forward scattering diameter and an exposure area ratio dependent correction as correction corresponding to a backward scattering coefficient for achieving good plotting dimension accuracy even for a fine pattern plotting where regions having different exposure area ratios are present in admixing manner. On the other hand, the present invention has a construction to incorporate dimension dependent correction with taking forward scattering diameter alpha as a reference dimension to establish an effective backward scattering coefficient eta *, and to perform correction of an exposure energy with the effective backward scattering coefficient eta * and an exposure area ratio R. <IMAGE></p> |
