THIN FILM MANUFACTURING APPARATUS, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a thin film manufacturing apparatus for depositing a semiconductor thin film and an insulating thin film capable of reducing the take-in of fluorine atoms into the semiconductor film when manufacturing the thin film using a plasma chemical vapor phase deposition(CVD) method, and a thin film manufacturing method using the apparatus. SOLUTION: In a plasma chemical vapor phase deposition(CVD) apparatus, the surface roughness (Ra) of a member in a vacuum tank is set to be <=5.0μm. The member preferably includes at least an inner wall of the vacuum tank, and a process gas diffusion plate. The residual quantity of fluorine in the vacuum tank is reduced thereby to prevent degradation of TFT performances.