发明名称 METHOD FOR RECOVERY OF HIGH-PURITY TANTALUM, HIGH-PURITY TANTALUM SPUTTERING TARGET, AND THIN FILM DEPOSITED BY USING THIS SPUTTERING TARGET
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for removing iron, niobium, tungsten, molybdenum, oxygen, carbon, or the like, which are get mixed in scrap, such as waste pieces of material, machining chips and surface-grinding-wheel swarf, generated in the course of a target-manufacturing process by a relatively simplified step and recovering high-purity tantalum reusable as a tantalum target at a low cost and also to provide a target obtained by using this high-purity tantalum and to prepare a thin film deposited by sputtering. SOLUTION: The method for recovering high-purity tantalum comprises steps of: dissolving tantalum scrap, such as tantalum chips, by means of hydrofluoric acid or mixed acid of hydrofluoric acid and nitric acid and removing an undissolved residue; adding a potassium-containing salt to precipitate a tantalum fluoride potassium crystal; and further subjecting this tantalum fluoride potassium crystal to sodium reduction to obtain metal tantalum powder.</p>
申请公布号 JP2002363662(A) 申请公布日期 2002.12.18
申请号 JP20010166303 申请日期 2001.06.01
申请人 NIKKO MATERIALS CO LTD 发明人 SHINDO YUICHIRO
分类号 C22B34/24;B22F9/04;B22F9/24;C22B7/00;C22B9/22;C23C14/14;C23C14/34;(IPC1-7):C22B34/24 主分类号 C22B34/24
代理机构 代理人
主权项
地址