METHOD FOR FORMING POLYMER SILICON THIN FILM OF LOW TEMPERATURE

摘要

PURPOSE: A method for forming a polymer silicon thin film of low temperatures is provided to reduce the time required for subsidiary steps except the sealing step for poly crystallizing an amorphous silicon thin film by radiating laser beams. CONSTITUTION: In a method for forming a polymer silicon thin film of low temperatures, a plurality of substrates(111,112) are mounted continuously in a direction that a laser beam radiator moves, so that the scanning is continuously carried out for the plurality of substrates entirely, and the silicon thin film is formed by the sequential lateral solidification(SLS).