| 摘要 |
PURPOSE: To improve punch-through resistance between a source and a drain with the reduction of a cell area in a non-volatile semiconductor memory device, without causing deterioration in bonding pressure resistance between a diffusing layer and a well. CONSTITUTION: The impurity of the same conductive type, as a well 201, is doped in a channel region between source/drain diffusing layers 205 so as not to contact the diffusing layers 205. While using mutually reverse oblique ion injections with a previously formed gate 207a as a mask, a heavily-doped region 501 of the same conductive type as that of the diffusion layers 205 and the well is formed in self-aligned manner to the gate 207a.
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