发明名称 Micro high-vacuum pressure sensor
摘要 A micro pressure sensor included within a low-pressure microelectronic device enclosure. The micro pressure sensor employs an electric field created by applying a large voltage potential difference to tiny conductive elements (302,304) within the micro pressure sensor. Electrons emitted via the influence of, and accelerated by, the electric field collide with gas molecules to produce positive ions. The positive ions are then accelerated toward a conductive element (304) coupled to a circuit. The current generated by the ions within the circuit coupled to the micro pressure sensor can be measured to determine the internal pressure within the low-pressure enclosure. The micro pressure sensor is manufactured by standard semiconductor fabrication techniques, and can be economically produced in large volumes. <IMAGE> <IMAGE> <IMAGE>
申请公布号 EP1267153(A1) 申请公布日期 2002.12.18
申请号 EP20020253730 申请日期 2002.05.28
申请人 HEWLETT-PACKARD COMPANY 发明人 LIEBESKIND, JOHN
分类号 G01L21/30;G01L1/00;G01L21/32;G01L21/34 主分类号 G01L21/30
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