METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the generation of crystal defects for extracting silicon atoms as well as to improve the reliability of laser device by utilizing the wavelength and the window structure of the laser device since the present invention does not have the crystal defect, thereby improving the lifetime. CONSTITUTION: A method for manufacturing a semiconductor device includes the steps of: installing one of a plurality of first semiconductor layers(2) on a semiconductor layers(2) on a semiconductor substrate(1), installing multi quantum well layer(180) on the first semiconductor layer(2), installing one semiconductor layer or a plurality of second semiconductor layers(6) on the quantum well layer(180), installing a SiO layer or a SiON layer on the second semiconductor layer(6), implanting Si ions from the SiO layer or the SiON layer and disordering a portion or all of the quantum well layer(180) by thermally annealing after the ion implantation process.