| 摘要 |
PURPOSE: A method for crystallizing silicon is provided to reduce a processing time and improve productivity by shortening a mobile distance of a laser beam pattern in a driving circuit part and enlarging the mobile distance of the laser beam pattern in a pixel part. CONSTITUTION: A plurality of crystalline regions are formed on a substrate by using a mask. The first crystalline region is formed with the first grain region, the second grain region, and a grain collision region. The second crystallization process is performed by irradiating the second laser beam on the substrate after the first crystallization process is finished. The crystallization processes are performed continuously to an X-axis direction. The first crystalline region is formed by completing the crystallization processes to the X-axis direction. The crystallization processes are performed by irradiating the laser beam after the mask is moved to a Y-axis direction or an X-Y stage is moved to a Y-axis direction. The grain regions including grains(370) are continuously formed by the crystallization processes.
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