| 摘要 |
PURPOSE: A method for manufacturing a capacitor of semiconductor devices is provided to improve a surface roughness by forming a lower electrode using two-step deposition composed of PECVD(Plasma Enhanced Chemical Vapor Deposition) and LPCVD(Low Pressure CVD). CONSTITUTION: Ruthenium(Ru) as a lower electrode conductive layer is deposited on an interlayer dielectric having a storage node hole of a semiconductor substrate(100) by two-step deposition. That is, ruthenium(Ru) is firstly deposited by using PECVD and secondly deposited on the PECVD-Ru film by using LPCVD, thereby forming a lower electrode pattern(140a). In the PECVD processing, NH3 or H2 is used as an reacting gas. Also, NH3 is used as an reacting gas in the Ru deposition using the LPCVD. Then, a Ta2O5 dielectric film and an upper electrode are sequentially formed on the lower electrode pattern(140a).
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