| 摘要 |
PURPOSE: A fail compensation circuit of a non-volatile ferroelectric memory device and a compensating method of the same are provided to reduce a redundancy time and exchange and add redundancies by using an internal fail compensation circuit. CONSTITUTION: A non-volatile ferroelectric memory device(50) is formed with an FRAM(Ferroelectric Random Access Memory). A memory test logic(51) generates redundancy activation pulses if row addresses including fail bits are found. A counter(52) receives the redundancy activation pulse and outputs a counter bit signal of n bits. A power-up sense portion(53) generates a power-up pulse according to an inputting state of a supply voltage. The first redundancy control portion(54) receives the power-up pulse and the redundancy activation pulse and outputs redundancy control signals(ENN,ENP,EQN,CPL,PREC,ENW). A redundancy counter decoding control portion(55) receives a counter bit signal from the counter(52) and a control signal(ENW) from the first redundancy control portion(54) and outputs an activated coding signal(ENW<n>). A redundancy coding portion(56) receives the redundancy control signals(ENN,ENP,EQN,CPL,PREC,ENW), outputs a master signal, programs fail addresses into plural redundancy coding cells, and output control signals.
|
