| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist material having higher contrast, i.e., a wider focus margin, and capable of solving the problem of size ratio of a close-packed pattern and an isolated pattern, and further to provide a pattern-forming method by using the resist material. SOLUTION: This basic compound is represented by general formula (1), (2) or (3). The resist material is characterized in that the resist material contains one or more kinds of the basic compounds selected from the group consisting of general formulas (5) to (9). The pattern-forming method comprises a step for coating the resist material on a substrate, a step for exposing the coated film after heat treatment through a photomask to high-energy rays having <=300 nm wavelength or an electron beam, and a step for carrying out the development by using a developing solution optionally after heat treating. |
