SILOXANE-BASED RESIN AND METHOD FOR FORMING SEMICONDUCTOR INTERLAYER INSULATING FILM BY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To obtain a siloxane-based resin having a lower dielectric constant and capable of attaining improvement of characteristics such as mechanical characteristics, heat stability, resistant properties required when used as a semiconductor interlayer insulating film and provide a method for producing the same resin and a method for forming the semiconductor interlayer film by using the same resin. SOLUTION: The siloxane-based resin is obtained by hydrolyzing, condensing and polymerizing a cyclic siloxane compound and/or a cage-like siloxane compound and one or more kinds of silane compounds in which silicon atoms are each selectively substituted with a hydrolyzable acting group at >=1 sites in an organic solvent in the presence of a catalyst and water. The method for forming the semiconductor interlayer insulating film is to use this siloxane-based resin.