| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD apparatus capable of reliably preventing film deposition on an end part (a side wall) and a back side of a substrate, and preventing foreign matters (particles) from easily entering an introducing pipe of inert gas in a chemical vapor deposition process to the substrate. SOLUTION: A mechanism of preventing a part in the vicinity of an end part of the substrate from being brought into contact with raw material gas, comprises a substrate holding mechanism abutted on a peripheral edge part of the substrate supported by a substrate supporting mechanism from an upper part of the substrate, and a substrate holding cover mechanism which forms an inert gas introducing passage between itself and the substrate holding mechanism while energizing the substrate holding mechanism toward the peripheral edge part of the substrate from the upper side, and supports the substrate holding mechanism. In the CVD apparatus, the inert gas introduced from the inert gas introducing mechanism is divided into the flow which is parallel to the surface of the substrate via an abutting part between the lower side of the substrate holding mechanism and a surface side of the peripheral edge part of the substrate, and directed to the center of the substrate, and the flow descending perpendicular to the surface of the peripheral edge part of the substrate via the inert gas introducing passage between the substrate holding mechanism and the substrate holding cover mechanism.
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