| 摘要 |
<p>An efficient and economical method for fabricating field emitter tips (506) within a layered substrate. The layered substrate is patterned using standard photolithographic techniques and etched to form a rectangular or cylindrical column on top of the substrate composed of conductive and non-conductive layers. The layered substrate is then exposed to an anisotropic etching medium which removes the column to produce a well (504) through the conductive and non-conductive layers (204, 206, 208, 210) and which produces a conical or pyramid-shaped field emitter tip (506) within the silicon substrate directly below the well (504). Finally, a pull-back etch is used to remove dielectric material from the walls of the well. In an optional step, a thin metal coating may be sputtered onto the surface of the silicon-based field emitter tip.</p> |
