METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of semiconductor devices is provided to restrain a leakage current and to reduce a damage of Ta2O5 dielectric film due to Cl radical by forming a TiON layer at interface between the dielectric film and an upper electrode of TiN. CONSTITUTION: After forming a polysilicon plug(105) on a semiconductor substrate(100) having a transistor, a lower electrode(110) is formed on the resultant structure. A dielectric film(115) made of Ta2O5 or TaON is formed on the lower electrode(110). After depositing a TiN layer using an ALD(Atomic Layer Deposition) on the dielectric film(115), a TiON layer(125) is formed by thermal oxidation of the TiN layer using O2 gas. Then, an upper electrode(130) is formed by depositing a TiN layer using a PVD(Physical Vapor Deposition) on the TiON layer(125).