| 摘要 |
PURPOSE: A laser diode and a manufacturing method thereof are provided to reduce the light loss by employing a current limiting layer of an n-type GaInP. CONSTITUTION: An n-type buffer layer(2), an n-type clad layer(3), an active layer(4), a p-type clad layer(5), an n-type current limiting layer(9), and a p-type cap layer(8) are formed on an n-type substrate(1). The n-type current limiting layer(9) is comprised of first current limiting layer(9a) made of an n-type GaAs and a second current limiting layer(9b) made of an n-type GaInP. In order to increase an energy band gap of the second current limiting layer(9b) than that of the active layer(4), a composition ratio of Ga(gallium) is increased. Thus, the energy band gap of the active layer(4) is 1.75 and that of the second current limiting layer(9b) is 1.81. As a result, a concentration of a carrier in a lower of the current limiting layer(9) is reduced.
|
