PRODUCING METHOD OF SEMICONDUCTOR DEVICE

摘要

A SIMOX substrate 1 is processed through high temperature oxidation treatment after forming a mask-pattern 3 to shield specified electrodes from oxidation in order to increase partly a thickness of a buried oxide layer 2 to form an area 4. Next, after an oxide film is removed from the surface of the substrate and LOCOS separation is practiced, MOSFET is produced by fabricating a source S and a drain D on the area 4 or the buried oxide layer 2. Since the buried oxide layer corresponding to electrodes parts influenced by disadvantages of parasitic capacitance are thickened, an operation speed of an inverter is not much decreased and since mean thickness of the buried oxide layer can be thinner, a decrease of a drain electric current by negative electrical resistance can be suppressed. Furthermore, since the thickness of the buried oxide layer can be controlled in response to each device, plural devices having different breakdown voltages are formed together on the same substrate.