发明名称 |
High-voltage semiconductor component, method for the production and use thereof |
摘要 |
The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body and/or in regions proximal to the surface of the semiconductor body at least over regions thereof has a lateral three-dimensional structure which has vertical recesses in the semiconductor body within which there are electrical conductors which are smaller than in the intervening spaces of the semiconductor body between the recesses, as well as a method for making and of using the semiconductor component.
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申请公布号 |
US6495864(B1) |
申请公布日期 |
2002.12.17 |
申请号 |
US20010700357 |
申请日期 |
2001.01.11 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SILBER DIETER;WONDRAK WOLFGANG;PLIKAT ROBERT |
分类号 |
H01L21/20;H01L21/762;H01L27/12;H01L29/06;H01L29/40;H01L29/739;H01L29/74;H01L29/78;H01L29/861;H01L29/868;(IPC1-7):H01L29/74;H01L31/111 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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