| 摘要 |
The present invention provides a method of forming a titanium polycide gate electrode. The method comprises the step of: forming a gate insulation film a top surface of a semiconductor substrate; forming a polysilicon layer on the gate insulation film; forming a silicon-rich titanium silicide layer on the polysilicon layer by a sputtering process so that a compositional ratio of silicon to titanium of the silicon-rich titanium silicide layer exceeds 2, where preferably the compositional ratio of titanium to silicon is in the range of 1:2.3 to 1:2.5 and more preferably 1:2.4; patterning laminations of the polysilicon layer and the silicon-rich titanium silicide layer to form a titanium polycide gate electrode on the gate insulation film; and subjecting the titanium polycide gate electrode to a rapid thermal oxidation, whereby excess silicon in surface regions of the silicon-rich titanium silicide layer and the polysilicon layers are oxidized, whilst the silicon-rich titanium silicide layer, except for the surface region, remains unchanged in silicon-rich titanium silicide state.
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