发明名称 |
Method for manufacturing diffraction grating and method for manufacturing semiconductor laser |
摘要 |
In exposing a diffraction grating pattern on a resist, the diffraction grating pattern is exposed via EB on an active region and the adjacent thereto only and the region which is not exposed via EB is exposed via Deep UV light so that the resist may be left on the active region and the adjacent thereto only after the exposed resist is developed according to the process of forming a diffraction grating for a distributed feedback semiconductor laser of the present invention. In addition, the resist-coated area can be gradually reduced from the resist existing area to the non-resist existing area and the average height of the substrate on which said diffraction grating is formed can be gradually changed on the diffraction grating forming region and non-diffraction grating forming region which results in preventing the crystallinity of a semiconductor layer on the substrate from being deteriorated. This enables formation of an excellent crystallinity semiconductor layer on the substrate on which the diffraction grating is locally formed.
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申请公布号 |
US6495384(B1) |
申请公布日期 |
2002.12.17 |
申请号 |
US19990428791 |
申请日期 |
1999.10.28 |
申请人 |
NEC CORPORATION |
发明人 |
MORIMOTO TAKAO;MUROYA YOSHIHARU |
分类号 |
H01L21/306;G02B5/18;G03F7/40;H01L27/04;H01S5/00;H01S5/12;(IPC1-7):H01L21/27 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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