发明名称 Dynamic random access memory device and semiconductor integrated circuit device
摘要 A DRAM, including a plurality of banks each having a plurality of sub-arrays, and sense amplifier circuits commonly shared by sub-arrays in different banks, has a row access mode for activating a sub-array selected from each bank for reading or writing data, and a refresh mode for activating a plurality of sub-arrays in each bank and refreshing memory cell data therein at substantially the same timing. Sub-arrays in each bank activated at substantially the same timing in the refresh mode are more than sub-arrays in each bank activated in the row access model. Thereby, occurrence of operation constrains is minimized to ensure high-speed operation and improve the system performance of DRAMs employing the non-independent bank system.
申请公布号 US6496442(B2) 申请公布日期 2002.12.17
申请号 US20020076558 申请日期 2002.02.19
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KOYANAGI MASARU;NAKAGAWA KAORU;HARA TAKAHIKO;TAKASE SATORU
分类号 G11C7/06;G06F12/00;G11C8/12;G11C8/18;G11C11/406;(IPC1-7):G11C8/00 主分类号 G11C7/06
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