发明名称 Ion-implanting method and ion-implanting apparatus
摘要 The ion-implanting apparatus includes an implanting control device 26a having the functions of sweeping an ion beam by a sweeping magnet 12 and scanning a target by a scan mechanism. The implanting control device 26a has the functions of changing a sweep frequency of the ion beam to be swept by said sweeping magnet according to at least one of the species and energy of the ion beam and changing the minimum number of times of scanning of the target to be scanned by said scan mechanism according to the changing of the sweep frequency.
申请公布号 US6495840(B2) 申请公布日期 2002.12.17
申请号 US20000748241 申请日期 2000.12.27
申请人 NISSIN ELECTRIC CO., LTD. 发明人 HAMAMOTO NARIAKI;MATSUMOTO TAKAO
分类号 C23C14/48;H01J37/147;H01J37/317;H01L21/265;(IPC1-7):G21K5/10 主分类号 C23C14/48
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