| 摘要 |
The present invention provides a semiconductor device having: a first semiconductor region of a first conductivity type having a first area and a second area; at least a diffusion region of a second conductivity type being provided on the first area and in an upper region of the first semiconductor region; and a p-n junction diode provided on the second area of the first semiconductor regions the p-n junction diode having a p-n junction comprising an interface between the first semiconductor region and a first impurity doped region of the second conductivity type selectively provided in an upper region of the first semiconductor region, wherein a first distance defined between a first bottom level of the first impurity doped region and a bottom level of the first semiconductor region is smaller than a second distance defined between a second bottom level of the at least diffusion region and the bottom level of the first semiconductor region.
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