Method for manufacturing semiconductor substrate having an epitaxial film in the trench,申请号US20000696951-传众专利搜索

发明名称	Method for manufacturing semiconductor substrate having an epitaxial film in the trench
摘要	A trench is formed in a silicon substrate, and an epitaxial film is formed on the substrate and in the trench. After a part of the epitaxial film formed around an opening portion of the trench is etched, another epitaxial film is formed on the substrate and in the trench. Accordingly, the trench can be filled with the epitaxial films completely. Then, the surface of the substrate is flattened.
申请公布号	US6495294(B1)	申请公布日期	2002.12.17
申请号	US20000696951	申请日期	2000.10.27
申请人	DENSO CORPORATION	发明人	YAMAUCHI SHOICHI;URAKAMI YASUSHI;ONODA KUNIHIRO;SAKAKIBARA TOSHIO;OTSUKA YOSHINORI
分类号	H01L21/28;H01L21/20;H01L21/205;H01L21/761;H01L29/04;H01L29/06;H01L29/16;(IPC1-7):H01L21/76	主分类号	H01L21/28
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