| 摘要 |
A method is described of manufacturing a semiconductor material having a zone (200) with p-conductivity type and n-conductivity type regions with dopant concentrations and dimensions such that, when the n- and p-conductivity type regions are depleted of free charge carriers the space charge per unit area of the regions balances at least to the extent that the resulting electric field is lower than that at which avalanche breakdown would occur in the area. The method starts with a semiconductor body having adjacent a first major surface (10b) a first semiconductor region (2) of one conductivity type. A mask (3, 4, 5) is provided on the first major surface, having at least one mask area masking a part (2a) of the first region. At least a part of the unmasked first region (2) is then removed to provide at least one opening (7) in the first region. Doped epitaxial semiconductor material (8; 81, 82; 8a) is selectively provided in the opening (7) so as to fill the opening and to provide at least a second region (8; 81, 8a) of the opposite conductivity type. Then material (8; 82; 8a) is removed from the first major surface (10b) using at least a part (4) of the mask as an etch stop layer so as to provide a planar surface.
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