Substrate processing apparatus and method of manufacturing semiconductor device

摘要

A substrate processing apparatus, wherein a flowing direction of a gas flow which has flown upwardly and ascended in an inner tube (3A) is changed at an upper portion of the inner tube (3A) so as to be flown between the inner tube (3A) and an outer tube (2A) and exhausted outwardly, comprising: an inner tube cap 11 suited for covering the upper portion of the inner tube (3A); gas passages provided between the upper portion of the inner tube (3A) and the inner tube cap (11); and the inner tube cap (11) having a central portion protruded into an upstream of the gas flow. According to the substrate processing apparatus thus configured and a method of manufacturing a semiconductor device using the substrate processing apparatus, it is possible to prevent a reaction product from being deposited on a ceiling portion of an outer tube as well as being deposited as particles on a processing or processed substrate or substrates disposed in the inner tube. Further, it is possible to smoothly deflect the direction of a gas flow so as to allow the substrate to be uniformly processed with a high quality.